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3SK317
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
REJ03G1247-0200 (Previous: ADE-208-778) Rev.2.00 Aug. 10, 2005
Features
* Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) * High power gain characteristics; (PG = 27.6 dB typ. at f = 200 MHz)
Outline
RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4)
2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain
Note:
Marking is "ZR-".
Rev.2.00
Aug 10, 2005,
page 1 of 6
3SK317
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 14 8 8 25 100 150 -55 to +150 Unit V V V mA mW
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure Noise figure Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) IDS(op) |yfs| Ciss Coss Crss PG NF PG NF NF Min 14 8 8 -- -- 0 0 4 20 2.4 0.8 -- 24 -- 12 -- -- Typ -- -- -- -- -- 0.2 0.3 8 25 3.1 1.1 0.021 27.6 1.0 15.6 3 2.7 Max -- -- -- 100 100 1 1 14 -- 3.5 1.4 0.04 -- 1.5 -- 4 3.5 Unit V V V nA nA V V mA mS pF pF pF dB dB dB dB dB Test Conditions ID = 200 A , VG1S = VG2S = -3 V IG1 = 10 A, VG2S = VDS = 0 IG2 = 10 A, VG1S = VDS = 0 VG1S = 6 V, VG2S = VDS = 0 VG2S = 6 V, VG1S = VDS = 0 VDS = 10 V, VG2S = 3 V, ID = 100 A VDS = 10 V, VG1S = 3 V, ID = 100 A VDS = 6 V, VG1S = 0.75 V, VG2S = 3 V VDS = 6 V, VG2S = 3 V ID = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 1 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA , f = 200 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 900 MHz VDS = 6 V, VG2S = 3 V ID = 10 mA, f = 60 MHz
Rev.2.00
Aug 10, 2005,
page 2 of 6
3SK317
Main Characteristics
Maximum Channel Power Dissipation Curve
Channel Power Dissipation Pch (mW)
200 20
Typical Output Characteristics
1.2 V VG2S = 3 V Pulse test 1.0 V
ID (mA) Drain Current
150
16
12 100 0.8 V 8 0.6 V 4 VG1S = 0.4 V 0 50 100 150 200 0 2 4 6 8 10
50
Ambient Temperature Ta
(C)
Drain to Source Voltage VDS (V)
Drain Current vs. Gate1 to Source Voltage
20 3.0 V 2.5 V 2.0 V 1.5 V 12 1.0 V VDS = 6 V Pulse test
Drain Current vs. Gate2 to Source Voltage
20 3.0 V 2.5 V 16 2.0 V VDS = 6 V Pulse test 1.5 V 1.0 V
ID (mA)
16
ID (mA) Drain Current
12
Drain Current
8
8
4 VG2S = 0.5 V 0 1 2 3 4 5
4
VG1S = 0.5 V
0
1
2
3
4
5
Gate1 to Source Voltage
VG1S (V)
Gate2 to Source Voltage
VG2S (V)
Forward Transfer Admittance vs. Gate1 to Source Voltage
Forward transfer admittance |yfs| (mS)
30
Power Gain vs. Drain Current
50
VDS = 6 V VG2S = 3 V f = 200 MHz
Power gain PG (dB)
VDS = 6 V f = 1 kHz 24
3V
40
18 2V 12 1.5 V 1V VG2S = 0.5 V 0 0.4 0.8 1.2
2.5 V
30
20
6
10
1.6 VG1S (V)
2
0
4
8
12
16
20
Gate1 to Source Voltage
Drain Current
ID (mA)
Rev.2.00
Aug 10, 2005,
page 3 of 6
3SK317
Noise Figure vs. Drain Current
5 VDS = 6 V VG2S = 3 V f = 200 MHz
Power Gain vs. Drain to Source Voltage
50 VG2S = 3 V ID = 10 mA f = 200 MHz
NF (dB)
Power Gain PG (dB)
20
4
40
3
30
Noise Figure
2
20
1
10
0
4
8
12
16
0
2
4
6
8
10
Drain Current ID (mA)
Drain to Source Voltage VDS
(V)
Noise Figure vs. Drain to Source Voltage
5 20 VG2S = 3 V ID = 10 mA f = 200 MHz
Power Gain vs. Drain Current
NF (dB)
3
Power Gain PG (dB)
4
16
12
Noise Figure
2
8 VDS = 6 V VG2S = 3 V f = 900 MHz
1
4
0
2
4
6
8
10
0
4
8
12
16
20
Drain to Source Voltage VDS
(V)
Drain Current ID (mA)
Noise Figure vs. Drain Current
5
Power Gain vs. Drain to Source Voltage
20
NF (dB)
Power Gain PG (dB)
4
16
3
12
Noise Figure
2 VDS = 6 V VG2S = 3 V f = 900 MHz 4 8 12 16 20
8 VG2S = 3 V ID = 10 mA f = 900 MHz 2 4 6 8 10
1
4
0
0
Drain Current ID (mA)
Drain to Source Voltage VDS
(V)
Rev.2.00
Aug 10, 2005,
page 4 of 6
3SK317
Noise Figure vs. Drain to Source Voltage
10 5 VG2S = 3 V ID = 10 mA f = 900 MHz
Noise Figure vs. Drain Current
VDS = 6 V VG2S = 3 V f = 60 MHz
NF (dB)
8
NF (dB) Noise Figure
4
6
3
Noise Figure
4
2
2
1
0
2
4
6
8
10
0
4
8
12
16
20
Drain to Source Voltage VDS
(V)
Drain Current
ID (mA)
Noise Figure vs. Drain to Source Voltage
5
NF (dB)
4
VG2S = 3 V ID = 10 mA f = 60 MHz
3
Noise Figure
2
1
0
2
4
6
8
10
Drain to Source Voltage VDS
(V)
Rev.2.00
Aug 10, 2005,
page 5 of 6
3SK317
Package Dimensions
JEITA Package Code SC-82A RENESAS Code PTSP0004ZA-A Package Name CMPAK-4(T) / CMPAK-4(T)V MASS[Typ.] 0.006g
D e2 b1 B B e
A Q c
E
HE LP L
Reference Symbol Dimension in Millimeters
A xM
A S A b
L1
A3 e2 e
A2
A
l1
yS b b2 c c1 c A-A Section
A1 S b1 b3 c1 l1
b5
e1
A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q
Min 0.8 0 0.8 0.25 0.35
Nom
0.1 1.8 1.15
1.8 0.3 0.1 0.2
0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1
Max 1.1 0.1 1.0 0.4 0.5
0.15 2.2 1.35
b4 B-B Section Pattern of terminal position areas
2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 0.9
1.5 0.2
Ordering Information
Part Name 3SK317ZR-TL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00
Aug 10, 2005,
page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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